he basis of a semiconductor device is a crystal made from semiconductor material (germanium, silicon, gallium arsenide, etc.) with one or more electron-hole transitions.
Before a single crystal will be turned into a semiconductor device, it must undergo different operations. It is necessary to identify the boule orientation by the given crystallographic directions, then cut the boule into wafers, polish them and clean repeatedly, then dope them in order to create the opposite conductivity type, and alternating it with photolithography processes, etc. To ensure the desired quality at the moment the wafer surfaces must be processed on precision surface-grinding machines by using abrasive material with a grain size of about 40 microns. Mechanical deformations of a crystal structure, accompaning surface layer removing, are eliminated by chemical etching in a solution of hydrofluoric (HF) acid at a ratio of 3:1.
Plasma processing of a single crystal silicon allows to accelerate significantly the process of backing production with the required degree of finish, and to replace a concentrated solution of hydrofluoric acid to a weak aqueous solution. This favour the semiconductor production ecology improvement and make the production cheaper. Inclusion of electrolyte-plasma treatment in manufacturing process will eliminate several production steps:
Division of semiconductor wafer with active structures into separate crystals, assembling in a frame, electrode lead attachment, containment and electrical parameters' control are finite working operations.